Effect of Nano-scale Strained Si Grown on SiGe-on-Insulator on Electron Mobility

IEEE International SOI Conference

Volumn , Issue , 2003, Pages 61-62

  Park, J G ^a   Shim, T H ^a   Lee, T H ^a   Park, Y K ^a   Moon, H K ^a   Maeng, S L ^b   Cho, W J ^b   Yoo, S D ^c  

^a Hanyang University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRON MOBILITY; SEMICONDUCTING GERMANIUM; THICKNESS CONTROL; ULTRAHIGH VACUUM;

DRAIN CURRENT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0142217051     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2003.1242898     Document Type: Conference Paper

References (3)

1. J. J. Welser, J. L. Hoyt, and J. F. Gibbons, "Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect-transistor," IEEE Electron Device Lett., vol. 15, p, 100, 1994.
2. S. Takagi, J. Koga, and A. Toriumi, Tech. Dig. Int. Electron Devices Meet. 1997, 219
3. F. Gamiz, P. Cartujo-Cassinello, J. B. Roladan, and F. Jimenez-Molinos, J. Appl. Phys. 92, 288 (2002).