A detailed theoretical and experimental noise study in n-on-p Hg 0.68Cd0.32Te photodiodes

Solid-State Electronics

Volumn 48, Issue 1, 2004, Pages 13-21

  Jozwikowski K ^a   Musca, C A ^b   Faraone, L ^b   Jozwikowska A ^c  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^c WARSAW UNIVERSITY OF LIFE SCIENCES   (Poland)

Author keywords

HgCdTe photodiodes; Noise current

Indexed keywords

COMPUTER SIMULATION; FERMI LEVEL; IONIZATION; MERCURY COMPOUNDS; PLASMA ETCHING;

NOISE CURRENTS;

PHOTODIODES;

EID: 0142185225     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00284-3     Document Type: Article

References (37)

1. Józwikowski K. Numerical modeling of fluctuation phenomena in semiconductor devices. J. Appl. Phys. 90(3):2001;1318-1327.
2. Dell J.M., Antoszewski J., Rais M.H., Musca C.A., White J.K., Nener B.D.et al. HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology. J. Electron. Mater. 29(6):2000;841-848.
3. Kruse P.W., McGlauchlin L.D., McQuistan R.B. Elements of infrared technology. 1962;Wiley, NY.
4. Kruse P.W. Keyes R.J. Optical of infrared detectors. 1977;5-69 Springer, Berlin.
5. Boyd R.W. Radiometry and the detection of optical radiation. 1983;Wiley, NY.
6. Long D. Generation-recombination noise limited detectivities of impurity and intrinsic photoconductive 8-14 μm infrared detectors. Infrared Phys. 7:1967;121-128.
7. Elliott CT. In: Hilsum, C, editors. Handbook on semiconductors, Nord-Holland Amsterdam, 1981, vol. 4, p. 727-98.
8. McWhorter A.L. Kingston R.H. Semiconductor surface physics. 1957;University of Pennsylvania, Philadelphia, PA.
9. Hooge N.F. 1/f noise is no surface effect Phys. Lett. 29A:1969;139-140.
10. Kleinpennig T.D. 1/f noise in p-n junction diode J. Vac. Sci. Technol. 3(1):1985;176-183.
11. Handel P.H. 1/f noise - an infrared phenomenon Phys. Rev. Lett. 34:1975;1492-1495.
12. Handel P.H. Quantum approach to. 1/f noise Phys. Rev. A22:1980;745-757.
13. Kousik G.S., van Vliet C.M., Bosman G., Handel P.H. Quantum. 1/f noise associated with ionized impurity scattering and electron-phonon scattering in condensed matter Adv. Phys. 34(6):1985;663-702.
14. van Vliet C.M. A survey of results and future prospect on quantum. 1/f noise and 1/f noise in general Solid-State Electron. 34(1):1991;1-21.
15. Pellegrini B. On mobility-fluctuation origin of. 1/f noise Solid-State Electron. 29(12):1986;1279-1287.
16. xTe J. Electron. Mater. 26(6):1997;643-648.
17. Jones C.L., Metcalfe N.E., Best A., Catchpole R., Maxey C.D., Gordon N.T.et al. Effect of device processing on. 1/f noise in uncooled Auger-suppressed CdHgTe diodes J. Electron. Mater. 27(6):1998;733-739.
18. Józwikowski K., Rogalski A., Józwikowska A. Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe heterostructure devices. J. Electron. Mater. 31(7):2002;677-682.
19. Nag B.R. Electron transport in compound semiconductors. 1980;Springer, Berlin.
20. Lundstrom M. Fundamentals of carrier transport. In: Neudeck GW, Pierret RF, editors. Modular series on solid state devices, Addison-Weseley, vol. 10, 1990.
21. Siliquini J.F., Dell J.M., Musca C.A., Faraone L. Scanning laser microscopy of reactive ion etching induced n-type conversion in vacancy doped p-type HgCdTe. Appl. Phys. Lett. 70(25):1997;3443-3445.
22. Rais M.H., Musca C.A., Dell J.M., Antoszewski J., Nener B.D., Faraone L. HgCdTe photovoltaic detectors fabricated using a new junction formation technology. Microelectron. J. 31:2000;545-551.
23. Rogalski A., Piotrowski J. Intrinsic infrared detectors. Progr. Quantum Electron. 12:1988;87-289.
24. Rogalski A. Infrared photon detectors. 1995;SPIE Optical Engineering Press, Bellingham, WA.
25. Commercial device simulator SEMICAD DEVICE. Dawn Technologies Inc. USA.
26. Commercial device simulator APSYS. Crosslight Software Inc. Canada.
27. xTe. J. Electron. Mater. 23:1994;1359-1377.
28. xTe. J. Appl. Phys. 45(3):1974;1463-1465.
29. xTe. Phys. Rev. B. 12(12):1975;5676-5681.
30. van der Ziel A. Noise in measurements. 1974;J. Wiley & Sons, NY.
31. Voss R.F., Clarke J. Fliker (1/f ) noise: equilibrium temperature and resistance fluctuations Phys. Rev. B. 13(2):1976;556-573.
32. Maleki M, Holland LR. In: Properties of narrow gap cadmium-based compounds: EMIS datareviews series no. 10, 48 ed. Capper P. IEE, London, 1994.
33. Brice JC. In: Brice JC, Capper P, editors. Properties of mercury cadmium telluride: EMIS datareviews series no. 3, 13, INSPECT. IEE, 1987.
34. van der Ziel A. Fluctuation phenomena in semiconductors. 1959;Butterworms Scientific, London.
35. xTe. Semicond. Sci. Technol. 2(1):1987;33-43.
36. xTe. J. Appl. Phys. 54(9):1983;5152-5157.
37. xTe. J. Appl. Phys. 60(7):1986;2377-2385.