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Volumn 31, Issue 7, 2002, Pages 677-682

Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices

(3) Jóźwikowski, Krzysztof a Rogalski, A a Jozwikowska A a

a MILITARY UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

1 f noise; HgCdTe heterostructure devices; Numerical modeling

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; MERCURY COMPOUNDS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

NOISE CURRENTS;

PHOTODIODES;

EID: 0036638377 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0218-0 Document Type: Article

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.