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Volumn 150, Issue 4, 2003, Pages 361-366

Radiation-induced changes in thin film structures

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DOSIMETRY; GAMMA RAYS; MIXTURES; SILICON COMPOUNDS; TELLURIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

EID: 0142157238     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20030664     Document Type: Conference Paper
Times cited : (20)

References (27)
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    • Shpotyuk, O.I.1
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    • 2 mixed catalysts in hydrogen peroxide decomposition and influence of ionizing radiation
    • 2 mixed catalysts in hydrogen peroxide decomposition and influence of ionizing radiation', Radiat. Phys. Chem., 2000, 59, pp. 467-475
    • (2000) Radiat. Phys. Chem. , vol.59 , pp. 467-475
    • Mucka, V.1    Podlaha, J.2    Silber, R.3
  • 12
    • 0000845773 scopus 로고    scopus 로고
    • Conductive transparent films deposited by simultaneous sputtering of zinc-oxide and indium-oxide targets
    • Tominaga, K., Murayama, T., Mori, I., Okamoto, T., Hiruta, K., Moriga, T., and Nakabayashi, I: 'Conductive transparent films deposited by simultaneous sputtering of zinc-oxide and indium-oxide targets', Vacuum, 2000, 59, pp. 546-552
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    • Tominaga, K.1    Murayama, T.2    Mori, I.3    Okamoto, T.4    Hiruta, K.5    Moriga, T.6    Nakabayashi, I.7
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    • Multicomponent tellurite thin film materials with high refractive index
    • Weng, L., and Hodgson, S.N.B.: 'Multicomponent tellurite thin film materials with high refractive index', Opt. Mater., 2002, 19, pp. 313-317
    • (2002) Opt. Mater. , vol.19 , pp. 313-317
    • Weng, L.1    Hodgson, S.N.B.2
  • 19
    • 0024684327 scopus 로고
    • Effects of heat treatment and ion doping of indium oxide
    • Lee, C.H., Kuo, C.V., and Lee, C.L.: 'Effects of heat treatment and ion doping of indium oxide', Thin Solid Films, 1989, 173, pp. 59-66
    • (1989) Thin Solid Films , vol.173 , pp. 59-66
    • Lee, C.H.1    Kuo, C.V.2    Lee, C.L.3
  • 22
    • 0042219773 scopus 로고
    • A new device using the tunneling process in narrow p-n junctions
    • Esaki, L., and Miyahara, Y.: 'A new device using the tunneling process in narrow p-n junctions', Solid-State Electron., 1960, 1, pp. 13-14
    • (1960) Solid-state Electron. , vol.1 , pp. 13-14
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    • Rectification, diodes, and photocells
    • Hunter, L.P. (Ed.): McGraw-Hill Book Company
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    • Hunter, L.P.1
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.