Exciton-polariton lasing in a microcavity

Semiconductor Science and Technology

Volumn 18, Issue 10, 2003, Pages

  Weihs, Gregor ^a,b   Deng, Hui ^a   Huang, Robin ^c   Sugita, Mitsuro ^d   Tassone, Francesco ^a,e   Yamamoto, Yoshihisa ^a  

^a STANFORD UNIVERSITY   (United States)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d CANON INC   (Japan)

^e NONE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS; PHASE TRANSITIONS; PHOTONS; SEMICONDUCTOR MATERIALS; STATISTICS;

BOSE-EINSTEIN PHASE TRANSITION; EXCITON-POLARITON LASING; SEMICONDUCTOR MICROCAVITY;

EXCITONS;

EID: 0142059809     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/10/313     Document Type: Article

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