In situ high temperature synchrotron-radiation diffraction studies of silicidation processes in nanoscale Ni layers

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 226-232

  Rinderknecht, J ^a   Prinz, H ^a   Kammler, T ^a   Schell, N ^b   Zschech, E ^a   Wetzig, K ^c   Gessner, T ^d  

^a IBM MICROELECTRONICS   (United States)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c IFW DRESDEN   (Germany)

^d CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Capping layer; Dopants; Nickel silicide; Phase formation; Transition temperatures

Indexed keywords

DIFFRACTION; POLYCRYSTALLINE MATERIALS; SYNCHROTRON RADIATION; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

NICKEL SILICIDES;

NICKEL;

EID: 0142043403     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00419-2     Document Type: Conference Paper

References (15)

1. Muraka S.P. Silicides for VLSI Applications. 1983;Academic Press.
2. Maex K., van Rossum M. Properties of Metal Silicides. 1995;INSPEC, London.
3. Lauwers A., Besser P., Gutt T., Satta A., de Potter M., Lindsay R., Roelandts N., Loosen F., Jin S., Bender H., Stucchi M., Vrancken C., Deweerdt B., Maex K. Comparative study of nickel silicide and cobalt silicide for sub 0.25 μm technologies. Microelectron. Eng. 50:2000;103-116.
4. Lauwers A., de Potter M., Chamirian O., Lindsay R., Demeurisse C., Vrancken C., Maex K. Silicides for the 100 nm node and beyond. Co-silicide, Co(Ni)-silicide and Ni-silicide. Microelectron. Eng. 64:2002;131-142.
5. Q. Xiang, B. Yu, H. Wang, M.-R. Lin, High performance sub-50 nm CMOS with advanced gate stack, Symposium On VLSI Technology Digest of Technical Papers, 2001.
6. 2 formation from Co-Ni-alloy. Microelectron. Eng. 60:2002;221-230.
7. W. Blum, H.-J. Engelmann, J. Rinderknecht, E. Zschech, EFTEM study of Ti/TiN and Co-silicide thin films at cross-sections of device structures, Proceedings of 11th International Conference on Microscopy of Semiconducting Materials, 1999.
8. Rinderknecht J., Prinz H., Kammler T., Berberich F., Zschech E. In situ high-temperature synchrotron-radiation diffraction studies of Ni and Co-Ni silicidation processes. Microelectron. Eng. 64:2002;143-149.
9. Matz W., Schell N., Bernhard G., Prokert F., Reich T., Claußner J., Oehme W., Schlenk R., Dienel S., Funke H., Eichhorn F., Betzl M., Pröhl D., Strauch U., Hüttig G., Krug H., Neumann W., Brendler V., Reichel P., Denecke M.A., Nitsche N. ROBL - a CRG beamline for radiochemistry and materials research at the ESRF. J. Synchrotron Radiat. 6:1999;1076-1085.
10. 2 formation on single and polycrystalline silicon as a function of linewidth and dopant at rapid thermal annealing rates, Proceedings of 11th International Conference on Microscopy of Semiconducting Materials, Conference Proceedings ULSI XI, 1996.
11. O. Chamirian, A. Lauwers, J.A. Kittl, O. Richard, M. van Dal, K. Maex, Thickness scaling issues of Ni silicide, Presented at the European workshop on Materials for Advanced Metallization 2003, La Londe Les Maures, France, 2003.
12. 1-x/Ti system. Microelectron. Eng. 64:2002;173-180.
13. P. Besser, S. Chan, E. Paton, T. Kammler, D. Brown, P. King, L. Pressley, Silicides for the 65 nm technology node, MRS Symposium Proceedings 706 (2003) in press.
14. Vankar V.D. Kinetics of growth or refractory metal/near noble metal silicides. Proc. Indian Acad. Sci. 57:(2):1991;195-203.
15. Gösele U., Tu K.N. Growth kinetics of planar binary diffusion couples: "Thin-film case" versus "Bulk cases" J. Appl. Phys. 53:1982;3252-3260.