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Materials Research Society Symposium-Proceedings

Volumn 612, Issue , 2000, Pages D481-D486

Fabrication of air-gaps between Cu interconnects for low intralevel k

(11) Bhusari, Dhananjay M a Wedlake, Michael D a Kohl, Paul A a Case, Carlye b Klemens, Fred P b Miner, John b Lee, Byung Chan c Gutmann, Ronald J c Lee, J J d Shick, Robert e Rhodes, L e

a Georgia Institute of Technology (United States)

b NOKIA RESEARCH CENTER (United States)

c RENSSELAER POLYTECHNIC INSTITUTE (United States)

d MOTOROLA INC (United States)

e GOODRICH CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COPPER; DIELECTRIC MATERIALS; METALLIZING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SILICA;

SINGLE DAMASCENE PROCESSES;

PERMITTIVITY;

EID: 4243308884 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-612-d4.8.1 Document Type: Article

Times cited : (5)

References (12)

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4
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6
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- Kohl, P.A.¹ Zhao, Q.² Patel, K.³ Schmidt, D.⁴ Bidstrup-Allen, S.A.⁵ Shick, R.⁶ Jayaraman, S.⁷

7
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- Shick, R.A.¹ Goodall, B.L.² McIntosh, L.H.³ Jayaraman, S.⁴ Kohl, P.A.⁵ Bidstrup-Allen, S.A.⁶ Grove, N.R.⁷

11
- 0032048041
- (1998) J. Electrochem Soc. , vol.145 , pp. 1257
- Zhao, Q.¹ Kohl, P.A.²

12
- 0003508875
- John Wiley & Sons Inc.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.