Fokker-Planck modeling of electron kinetics in plasmas and semiconductors

Computational Materials Science

Volumn 28, Issue 2, 2003, Pages 302-320

  Kolobov, Vladimir I ^a  

^a DYNAMICS RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; COMPUTER SIMULATION; FLUXES; KINETIC THEORY; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DEVICES;

ELECTRON KINETICS;

PLASMAS;

EID: 0142008362     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0256(03)00115-0     Document Type: Conference Paper

References (31)

1. Risken H. The Fokker-Planck Equation. 1984;Springer, Berlin.
2. Cercignani C. The Boltzmann Equation and its Applications. 1988;Springer-Verlag.
3. Shkarofsky I.P., Johnson T.W., Bachinski M.P. The Particle Kinetics of the Plasmas. 1966;Addison-Wesley, Reading.
4. Hockney R.W., Easwood J.W. Computer Simulation Using Particles. 1988;Adam Hilder, Bristol.
5. Batishchev O.V. Fully kinetic simulation of coupled plasma and neutral particles in scrape-off layer plasmas of fusion devices. J. Plasma Phys. 61:1999;347.
6. K. Banoo, Direct Solution of the Boltzmann Transport Equation in Nanoscale Silicon Devices, PhD Thesis, Purdue University, 2000.
7. Nakamura T., Yabe T. Cubic interpolated propagation scheme for solving the hyper-dimensional Vlasov-Poisson equation in phase space. Comput. Phys. Commun. 120:1999;122.
8. Aristov V.V. Direct methods of solving the Boltzmann equation and study of nonequilibrium flows. 2001;Kluwer Academic Publishers, Dordrecht. 312pp.
9. Vasenkov A.V., Kushner M.J. Electron energy distributions and anomalous skin depth effects in high-plasma-density inductively coupled discharges. Phys. Rev. E. 66:2002;066411.
10. Meyyappan M. Plasma process modeling. Meyyappan M. Computational Modeling in Semiconductor Processing. 1994;The Artech House.
11. CFD-ACE + Users Manual, CFD Reseach Corporation, Hunsville, AL, 2002. Available from: 〈http://www.cfdrc.com/̃cfdplasma〉.
12. Tsendin L.D.et al. Principles of Glow Discharges. 2004;Springer-Verlag.
13. Kortshagen U., Tsendin L.D. Electron Kinetics and Applications of Glow Discharges. 1998;Plenum Press Inc. New York.
14. Kolobov V.I., Godyak V.A. Nonlocal electron kinetics in collisional gas discharge plasmas (Review). IEEE Trans. Plasma Sci. 23:1995;503.
15. Degond P. An infinite system of diffusion equations arizing in transport theory: the coupled SHE model. Math. Mod. Meth. Appl. Sci. 11:2001;903.
16. Bringuier E. Fokker-Planck approach to nonlocal high-field transport. Phys. Rev. B. 54:1997;5328 Bringuier E. Augmented Fokker-Planck equation for electron transport in arbitrary electric fields. J. Appl. Phys. 86:1999;6847.
17. Bringuier E. Fokker-Planck approach to nonlocal high-field transport. Phys. Rev. B. 54:1997;5328 Bringuier E. Augmented Fokker-Planck equation for electron transport in arbitrary electric fields. J. Appl. Phys. 86:1999;6847.
18. Albritton J.R. Laser absorption and heat transport by non-Maxwell-Boltzmann electron distributions. Phys. Rev. Lett. 50:1983;2078.
19. Epperlein E.M. Fokker-Planck modelling of electron transport in laser produced plasmas. Laser Particle Beams. 12:1994;257.
20. Godyak V.A., Piejak R.B., Alexandrovich B.M. Electron energy distribution function measurements and plasma parameters in inductively coupled argon plasma. Plasma Sour. Sci. Technol. 11:2002;525.
21. Ivanov V., Proshina O., Rakhimova T., Rakhimov A., Herrebout D., Bogaerts A. Comparison of a one-dimensional particle-in-cell Monte Carlo model and a one-dimensional fluid model for a CH4/H2 capacitively coupled radio frequency discharge. J. Appl. Phys. 91:2002;6296.
22. Bogdanov E.A., Kolobov V.I., Kudryavtsev A.A.et al. Scaling laws for oxygen discharge plasmas. Tech. Phys. 47:2002;946.
23. 2. Plasma Phys. Rep. 26:2000;972.
24. Bringuier E. High field transport in model materials. Phys. Rev. B. 54:1996;1799.
25. Gnani E., Reggiani S., Rudan M. Full band transport properties of silicon dioxide using the spherical harmonics expansion of the BTE. Physica B. 314:2002;193.
26. Liang W., Goldsman N., Meyergoyz I. 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations. IEEE Trans. Electron Dev. 44:1997;257.
27. Rahmat K., White J., Antoniadis D.A. Simulation of semiconductor devices using a Galerkin/SHE approach to solving the coupled Poisson-Boltzmann system. IEEE Trans. Comput. Aided Des. Integ. Cirquits Syst. 15:1996;1181.
28. Greiner A., Vecchi M.C., Rudan M. Modeling surface scattering effects in the solution of the Boltzmann transport equation based on the spherical harmonics expansion. Semicond. Sci. Technol. 13:1998;1080.
29. H. Tsuchiya, T. Miyoshi, Quantum transport modeling of ultrasmall semiconductor devices, Invited Paper Special Issue on TCAD for Semiconductor Industries. IEICE Trans. Electron E82-C, 1999, p. 880.
30. D.A. Antoniadis, et al., MIT Well-Tempered Bulk-Si NMOSFET Device, Available from: 〈http://www-mtl.mit.edu/Well/〉.
31. Fedoseyev A., Kolobov V., Arslanbekov R., Przekwas A. Kinetic simulation tools for nano-scale semiconductor devices. Microelectron. Engrg. 69:2003.