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Volumn 13, Issue 10, 1998, Pages 1080-1089

Modelling surface-scattering effects in the solution of the Boltzmann transport equation based on the spherical-harmonics expansion

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOS DEVICES; SEMICONDUCTOR DEVICES;

EID: 0032179755     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/10/005     Document Type: Article
Times cited : (8)

References (19)
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    • Ventura, D.1    Gnudi, A.2    Baccarani, G.3
  • 2
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    • Liang W, Goldsmann N, Mayergoyz I and Oldiges P J 1997 2-d mosfet modelling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations IEEE Trans. Electron. Devices ED-44 257-67
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    • A deterministic approach to the solution of the BTE in semiconductors
    • Ventura D, Gnudi A and Baccarani G 1995 A deterministic approach to the solution of the BTE in semiconductors Riv. Nuovo Cimento 18 1-33
    • (1995) Riv. Nuovo Cimento , vol.18 , pp. 1-33
    • Ventura, D.1    Gnudi, A.2    Baccarani, G.3
  • 4
    • 0027576244 scopus 로고
    • Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation
    • Gnudi A, Ventura D, Baccarani G and Odeh F 1993 Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation Solid-State Electron. 36 575-81
    • (1993) Solid-State Electron. , vol.36 , pp. 575-581
    • Gnudi, A.1    Ventura, D.2    Baccarani, G.3    Odeh, F.4
  • 5
    • 0000574365 scopus 로고
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    • Ventura D, Gnudi A and Baccarani G 1992 An efficient method for evaluating the energy distribution of electrons in semiconductors based on the spherical harmonics expansion IEICE Trans. Electron. 75-C 194-9
    • (1992) IEICE Trans. Electron. , vol.75 C , pp. 194-199
    • Ventura, D.1    Gnudi, A.2    Baccarani, G.3
  • 6
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    • Incorporating full band-structure effects in the spherical-harmonics expansion of the Boltzmann transport equation
    • ed H S Bennet and M E Law (New York: IEEE)
    • Vecchi M C, Ventura D, Gnudi A and Baccarani G 1994 Incorporating full band-structure effects in the spherical-harmonics expansion of the Boltzmann transport equation Proc. NUPAD V Conf. (Honolulu, 1994) ed H S Bennet and M E Law (New York: IEEE) pp 55-8
    • (1994) Proc. NUPAD V Conf. (Honolulu, 1994) , pp. 55-58
    • Vecchi, M.C.1    Ventura, D.2    Gnudi, A.3    Baccarani, G.4
  • 7
    • 35949009958 scopus 로고
    • Monte-Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
    • Fischetti M V and Laux SE 1988 Monte-Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects Phys. Rev. B 38 9721
    • (1988) Phys. Rev. B , vol.38 , pp. 9721
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    • Greene R F 1969 Transport and scattering near crystal surfaces Solid State Surface Sciences vol 1, ed M Green (New York: Dekker) pp 87-132
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    • Greene, R.F.1
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    • Singapore: Maxwell MacMillan International
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    • (1991) Semiconductors
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.