Luminescent Si-Ge solid solution layers Er-doped in molecular-beam epitaxy

Semiconductors

Volumn 36, Issue 6, 2002, Pages 625-628

  Shengurov, V G ^a   Svetlov, S P ^a   Chalkov, V Yu ^a   Andreev, B A ^b   Krasil'nik Z F ^b   Ber, B Ya ^c   Drozdov, Yu N ^b   Yablonsky, A N ^b  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036624070     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1485659     Document Type: Article

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