Improvement in the quality of LiCaAlF6 single crystal as window material

Optical Materials

Volumn 24, Issue 1-2, 2003, Pages 123-127

  Sato, H ^a,b   Bensalah, A ^a   Yoshikawa, A ^a   Nikl, M ^c   Machida, H ^b   Fukuda, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NEC TOKIN CORPORATION   (Japan)

^c INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Annealing; Czochralski method; Doping; Induced absorption; LiCaAlF6; Optical material

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; LIGHT ABSORPTION; LIGHT TRANSMISSION; LITHIUM COMPOUNDS; LITHOGRAPHY; RADIATION DAMAGE; X RAY ANALYSIS;

INDUCED ABSORPTION;

SINGLE CRYSTALS;

EID: 0141924517     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00115-0     Document Type: Conference Paper

References (11)

1. The National Technology Roadmap for Semiconductors. Edited by Semiconductor Industry Association.
2. Harriott L.R. Mater. Sci. Semicond. Process. 1:1998;93.
3. R. Harbison, in: Proceedings of the First International Symposium on 157 nm Lithography, vol. 1, Dana Point, California, USA, 2000, pp. 9-33.
4. Hooker S.M., Landsberg P.T. Prog. Quantum Electron. 18:1994;227.
5. Whitfield M.D., Lansley S.P., Gaudin O., McKeag R.D., Rizvi N., Jackman R.B. Diam. Relat. Mater. 10:2001;693.
6. T.M. Bloomstein, V. Liberman, M. Rothschild, D.E. Hardy, R.B. Goodman, in: Proceedings of Emerging Lithographic Technologies III, vol. 342, SPIE, 1999, p. 3676.
7. Bloomstein T.M., Hom M.W., Rothschild M., Kunz R.R., Palmacol S.T., Goodman R.B. J. Vac. Sci. Technol. B15:1997;2112.
8. Belt R.F., Uhrin R. J. Cryst. Growth. 109:1991;340.
9. Shimamura K., Na Mujilatu, Nakano K., Baldochi S.L., Liu Z., Ohtake H., Sarukura N., Fukuda T. J. Cryst. Growth. 197:1999;896.
10. Sato H., Shimamura K., Bensalah A., Satonaga T., Mihokova E., Dusek M., Vedda A., Martini M., Machida H., Fukuda T., Nikl M. J. Appl. Phys. 91:2002;5666.
11. Attix F.H., Roesch W.C. Radiation Dosimetry. vol. 1:1968;112-144 Academic Press, New York. (Chapter 3).