The design and the fabrication of monolithically integrated GaInAsP MQW laser with butt-coupled waveguide

IEEE Photonics Technology Letters

Volumn 15, Issue 10, 2003, Pages 1339-1341

  Oh, Su Hwan ^a   Lee, Chul Wook ^a   Lee, Ji Myon ^a   Kim, Ki Soo ^a   Ko, Hyunsung ^a   Park, Sahnggi ^a   Park, Moon Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Butt coupling; Coupling efficiency; Integrated laser; Reactive ion etching (RIE) followed by selective wet etching

Indexed keywords

HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

BUTT-COUPLED WAVEGUIDE; INTEGRATED PHOTONIC DEVICES; MULTIQUANTUM-WELL LASER; SELECTIVE WET ETCHING;

QUANTUM WELL LASERS;

EID: 0141918550     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.816132     Document Type: Article

References (9)

1. P. J. Harmsma, M. R. Leys, C. A. Verschuren, H. Vonk, M. K. Smit, and Y. S. Oei, "Integration of optical amplifier and passive waveguide devices on InP using selective area chemical beam epitaxy," in Proc. 11th Int. Conf. Indium Phosphide and Related Materials, 1999, pp. 365-368.
2. D. Wake, S. N. Judge, T. P. Spooner, M. J. Harlow, W. J. Duncan, I. D. Henning, and M. J. O'Mahony, "Monolithic integration of 1.5 μm optical preamplifier and PIN photodetector with a gain of 20 dB and a bandwidth of 35 GHz," Electron. Lett., vol. 26, no. 15, pp. 1166-1168, 1990.
3. T. M. Cockerill, D. V. Forbes, H. Han, and J. J. Coleman, "Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective area MOCVD," Electron. Lett., vol. 4, no. 4, pp. 448-450, 1993.
4. Y. Abe, K. Kishino, Y. Suematsu, and S. Arai, "GaInAsP/InP integrated laser with butt-jointed built-in distributed Bragg reflector waveguide," Electron. Lett., vol. 17, no. 25, pp. 945-947, 1981.
5. M. Renaud, J. A. Cavalles, P. Jarry, E. Boucherez, and M. Erman, "Extremely high waveguide optical amplifier coupling efficiency measured on passive test structure," IEEE Photon. Technol. Lett., vol. 3, pp. 47-49, Jan. 1991.
6. T. Brenner, E. Gini, and H. Melchior, "Low coupling losses between InP-InGaAsP optical amplifiers and monolithically integrated waveguides," IEEE Photon. Technol. Lett., vol. 5, pp. 212-214, Feb. 1993.
7. J.-H. Ahn, K. R. Oh, J. S. Kim, S. W. Lee, H. M. Kim, K. E. Pyun, and H. M. Park, "Uniform and high coupling efficiency between InGaAsP-InP buried heterostructure optical amplifier and monolithically butt-coupled waveguide using reactive ion etching," IEEE Photon. Technol. Lett., vol. 8, pp. 200-202, Feb. 1996.
8. 2 reactive ion etching," Semicond. Sci. Technol., vol. 13, no. 10, pp. 1205-1208, 1998.
9. K. Utaka, K. I. Kobayashi, and Y. Suematsu, "Lasing characteristics of 1.5 - 1.6 μm GaInAsP-InP integrated twin-guide lasers with first-order distributed Bragg reflectors," IEEE J. Quantum Electron., vol. QE-17, pp. 651-658, May 1981.