Fabrication of a high-performance InGaAsP/InP integrated laser with butt-coupled passive waveguides utilizing CH4/H2 reactive ion etching

Semiconductor Science and Technology

Volumn 13, Issue 10, 1998, Pages 1205-1208

  Ahn, Joo Heon ^a   Oh, Kwang Ryong ^a   Park, Chan Yong ^a   Han, Seon Gyu ^a   Kim, Hae Geun ^a   Lee, Byung Teak ^b   Kim, Dong Keun ^b   Park, Chongdae ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chonnam National University   (South Korea)

^c Myong Ji University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED OPTICS; OPTICAL WAVEGUIDES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE;

BUTT-COUPLED PASSIVE WAVEGUIDES;

SEMICONDUCTOR LASERS;

EID: 0032181209     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/10/024     Document Type: Article

References (11)

1. Oberg M G, Broberg B and Lindgren S 1987 IEEE J. Quantum Electron. QE-23 1021
2. Oh Kwang Ryong, Ahn Joo-Heon, Kim Jeong Soo, Lee Seung Won, Kim Hong Man, Pyun Kwang Eui and Park Hyung Moo 1996 IEE Electron. Lett. 32 39
3. Renaud M, Cavailles J A, Jarry Ph, Boucherrez E and Erman M 1991 IEEE Photon. Technol. Lett. 3 47
4. Brenner T, Gini E and Melchior H 1993 IEEE Photon. Technol. Lett. 5 212
5. Ahn Joo-Heon, Oh Kwang Ryong, Kim Jeong Soo, Lee Seung Won, Kim Hong Man, Pyun Kwang Eui and Park Hyung Moo 1996 IEEE Photon. Technol. Lett. 8 200
6. Pearton S J, Chakrabarti U K and Baiocchi F A 1989 Appl. Phys. Lett. 55 1633
7. Dautremont-Smith W C, Lopata J, Pearton S J, Koszi L A, Stavola M and Swaminathan 1989 J. Appl. Phys. 66 1993
8. Hayes T R, Dautremont-Smith W C, Luftman H S and Lee J W 1989 Appl. Phys. Lett. 55 56
9. Lee Byung-Teak, Kim Dong-Keun and Ahn Joo-Heon 1996 Semicond. Sci. Technol. 11 1456
10. Lee B T, Logan R A, Kalicek R F Jr, Sergent A M, Coblentz D L, Wecht K W and Tanbun-Ek T 1991 IEEE Photon. Technol. Lett. 5 279
11. Pang S W, Goodhue W D, Lyszczarz T, Ehrlich D J, Goodman R B and Johnson G D 1988 J. Vac. Sci. Technol. B 6 1916