Low-temperature electron mobility in Ga0.5In0.5P/ GaAs quantum wells

Nanotechnology

Volumn 14, Issue 9, 2003, Pages 965-967

  Nag, B R ^a   Das, Madhumita ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DEFORMATION; ELECTRON MOBILITY; PHONONS; SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS;

BARRIER LAYERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0141903296     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/9/305     Document Type: Article

References (18)

1. Fresina M T, Ahmari D A, Mares P J, Hartmann Q J, Feng M and Stillman G E 1995 IEEE Electron Device Lett. 16 540
2. Liu W, Kim T, Ikalainen P and Khatibzadeh A 1994 IEEE Electron Device Lett. 15 190
3. Lu S S and Wang Y J 1994 IEEE Electron Device Lett. 15 60
4. Chan Y J, Pavlidis D, Razeghi M and Omnes F 1990 IEEE Trans. Electron Devices 37 2141
5. Chan Y J and Pavlidis D 1994 IEEE Trans. Electron Devices 41 637
6. Biswas D, Debbar N and Bhattacharya P 1990 Appl. Phys. Lett. 56 833
7. Haase M A 1991 Appl. Phys. Lett. 58 616
8. O'Shea J J, Reaves C M and Denbaars S P 1996 Appl. Phys. Lett. 69 3022
9. Kuo H C, Kuo J M, Wang Y C, Lin C H, Chen H and Stillman G E 1997 J. Electron. Mater. 26 944
10. Mukhopadhyay S and Nag B R 1992 Appl. Phys. Lett. 60 2897
11. Nag B R and Mukhopadhyay S 1991 J. Phys.: Condens. Matter 3 3757
12. Nag B R 1980 Electron Transport in Compound Semiconductors (Berlin: Springer) p 60, 62, 372
13. Nag B R, Mukhopadhyay S and Das M 1999 J. Appl. Phys. 86 459
14. Nolte D D, Walukiewicz W and Haller E E 1987 Phys. Rev. Lett. 59 501
15. Nag B R and Das M 1998 J. Appl. Phys. 83 5862
16. Nag B R and Mukhopadhyay S 1993 Appl. Phys. Lett. 62 2416
17. Yang M J, Lin-chung P J, Shanabrook B V, Watermann J R, Wagner R J and Moore W J 1993 Phys. Rev. B 47 1691
18. Saxena A K and Adams A R 1985 J. Appl. Phys. 58 2640