Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy

Journal of Electronic Materials

Volumn 26, Issue 8, 1997, Pages 944-948

  Kuo, H C ^a   Kuo, J M ^a,b   Wang, Y C ^a,b   Lin, C H ^a   Chen, H ^a   Stillman, G E ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

AlInP GaAs; Band offset; GaInP GaAs; Gas source molecular beam epitaxy (GSMBE); Photoluminescence (PL); Photoluminescence excitation (PLE); Three band Kane

Indexed keywords

EID: 0004411159     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0279-1     Document Type: Article

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