High power uni-Traveling-carrier photodiodes

International Topical Meeting on Microwave Photonics, MWP 1999

Volumn , Issue , 1999, Pages 75-78

  Ishibashi, T ^a   Fushimi, H ^a   Ito, H ^a   Furuta, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM PHOSPHIDE;

ABSORPTION LAYER; HIGH POWER; HIGH-POWER DEVICES; JUNCTION AREA; LAYER DEPLETION; LOW BIAS; PHOTORESPONSE CHARACTERISTICS; UNI-TRAVELING CARRIER PHOTODIODE;

INDIUM ALLOYS;

EID: 84886756466     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWP.1999.819655     Document Type: Conference Paper

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