Passivation of III-V compounds used for metal-insulator-InP(100) structures

Surface and Interface Analysis

Volumn 26, Issue 3, 1998, Pages 177-181

  Bideux, L ^a,c   Merle, S ^a   Robert, C ^a   Gruzza, B ^a   Benamarra, Z ^b   Tizi, S ^b   Chellali, M ^b  

^a UNIVERSITÉ BLAISE PASCAL   (France)

^b UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^c UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

Alumina; InP; Passivation

Indexed keywords

ALUMINA; CHEMICAL BONDS; CONDENSATION; ELECTRON ENERGY LEVELS; ETCHING; EVAPORATION; INTERFACES (MATERIALS); METAL INSULATOR BOUNDARIES; PASSIVATION; PROTECTIVE COATINGS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

BUFFER LAYERS; INDIUM ANTIMONIDE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032022442     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1096-9918(199803)26:3<177::aid-sia357>3.0.co;2-o     Document Type: Article

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