Modeling of InGaAs MSM photodetector for circuit-level simulation

Journal of Lightwave Technology

Volumn 14, Issue 5, 1996, Pages 716-723

  Xiang, Andrew ^b,d,e   Wohlmuth, Walter ^b,e,f   Fay, Patrick ^b,e,g   Kang, Sung Mo ^{a,b,h,i,j,k,l,m,n}   Adesida, Ilesanmi ^{a,b,c,h,k,o,p}  

^a IEEE

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c Ctr Compd Semiconduct M   (United States)

^d UNIVERSITY AT BUFFALO   (United States)

^e University of Ollinois

^f UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^g UNIVERSITY OF NOTRE DAME   (United States)

^h UNIVERSITY OF CALIFORNIA   (United States)

ⁱ LUCENT TECHNOLOGIES   (United States)

^j RUTGERS UNIVERSITY   (United States)

^k University of Illinois at Urbana Champaign   (United States)

^l MARSHALL UNIVERSITY   (United States)

^m EPFL   (Switzerland)

ⁿ Swiss Fed Institute of Technology ^*

^o Department of Theoretical and Applied Mechanics and the Cornell Nanofabrication Facility   (United States)

^p Department of Electrical Engineering   (Nigeria)

more..

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CIRCUIT THEORY; COMPUTER SIMULATION; ELECTRIC CURRENTS; HETEROJUNCTIONS; LIGHT ABSORPTION; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

CONVOLUTIONAL INTEGRALS; DARK CONDUCTION CURRENT; IMPULSE RESPONSE FUNCTIONS; S PARAMETER MEASUREMENT; SCHOTTKY BARRIER PHOTODETECTORS; THERMIONIC CURRENT EQUATION; TRAPEZOIDAL INTEGRATION METHOD;

PHOTODETECTORS;

EID: 0030142592     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.495150     Document Type: Article

References (18)

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