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Volumn 39, Issue 9, 1996, Pages 1283-1287
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High performance InP/InGaAs-based MSM photodetector operating at 1.3-1.5 μm
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
BANDWIDTH;
CHARACTERIZATION;
DESIGN;
ELECTRODES;
FABRICATION;
INTEGRATED OPTOELECTRONICS;
MOLECULAR BEAM EPITAXY;
PERFORMANCE;
QUANTUM EFFICIENCY;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
CONTACT FILM;
DARK CURRENT;
FULL WIDTH OF HALF MAXIMUM;
GAS SOURCE MOLECULAR BEAM EPITAXY;
IMPULSE RESPONSE;
METAL SEMICONDUCTOR METAL PHOTODETECTORS;
OPTICAL PULSE;
PHOTORESPONSIVITIES;
WAVELENGTH;
PHOTODETECTORS;
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EID: 0030242449
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(96)00044-5 Document Type: Review |
Times cited : (14)
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References (14)
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