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Volumn 39, Issue 9, 1996, Pages 1283-1287

High performance InP/InGaAs-based MSM photodetector operating at 1.3-1.5 μm

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHARACTERIZATION; DESIGN; ELECTRODES; FABRICATION; INTEGRATED OPTOELECTRONICS; MOLECULAR BEAM EPITAXY; PERFORMANCE; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030242449     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00044-5     Document Type: Review
Times cited : (14)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.