Maskless lithography: A low-energy electron-beam direct writing system with a common CP-aperture and the recent progress

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5037 II, Issue , 2003, Pages 1051-1058

  Nakasugi, Tetsuro ^a   Ando, Atsushi ^a   Inanami, Ryoichi ^a   Sasaki, Noriaki ^a   Ota, Takumi ^a   Nagano, Osamu ^a   Yamazaki, Yuuichiro ^a   Sugihara, Kazuyoshi ^a   Mori, Ichiro ^a   Miyoshi, Motosuke ^b   Okumura, Katsuya ^b   Miura, Akira ^c  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c e BEAM Corporation   (Japan)

Author keywords

Electron beam; In situ measurement; Low energy; Mark detection; Maskless lithography; Resist process

Indexed keywords

INSPECTION; LOGIC DEVICES; OPTICAL INSTRUMENT LENSES; SCANNING ELECTRON MICROSCOPY;

CHARACTER PROJECTION; ELECTRON-BEAM DIRECT WRITING; ELECTROSTATIC DEFLECTORS; MARK DETECTION METHOD; MASKLESS LITHOGRAPHY; RAW PROCESS TIME;

ELECTRON BEAM LITHOGRAPHY;

EID: 0141835868     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483607     Document Type: Conference Paper

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