Submicron poly-Si gate Si field-emitter array for generation of a collimated electron beam

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1594-1597

  Shimawaki, Hidetaka ^a   Shibuya, Syunpei ^b   Mimura, Hidenori ^b   Yokoo, Kuniyoshi ^b  

^a HACHINOHE INSTITUTE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; ELECTRON BEAMS; FIELD EMISSION DISPLAYS; LITHOGRAPHY; OXIDATION; REACTIVE ION ETCHING;

FIELD EMITTER ARRAYS (FEA);

POLYSILICON;

EID: 0141793007     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1596219     Document Type: Conference Paper

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