Fully large-scale integration-process-compatible Si field emitter technology with high controllability of emitter height and sharpness

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 2, 1997, Pages 488-490

  Takemura, Hisashi ^a   Furutake, Naoya ^a   Nisimura, Miyo ^a   Tsuida, Shunji ^a   Yoshiki, Masayuki ^a   Okamoto, Akihiko ^a   Miyano, Soichiro ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141782902     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589605     Document Type: Article

References (5)

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2. M. Urayama T. Ise, Y. Maruo, and A. Kishi, Jpn. J. Appl. Phys. 32, 6293 (1993).
3. J. H. Das and N. C. MacDonald. in Technical Digest of IVMC, 1995, p. 47.
4. K. Koga, K. Morimoto, Y. Hori, K. Kanamaru, and J. Itoh, in Technical Digest of IEEE IEDM, 1994, p. 23.
5. Y. Hori, K. Koga, K. Sakiyama, S. Kanamaru, and J. Itoh, in Technical Digest of IEEE IEDM, 1995, p. 395.