Wafer-bonded thin-film surface-roughened light emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4996, Issue , 2003, Pages 40-45

  Rooman, C ^a,b   De Jonge, S ^a   Karnutsch, C ^c   Streubel, K ^c   Kuijk, M ^b   Dutta, B ^a   Borghs, G ^a   Heremans, P ^a  

^a IMEC   (Belgium)

^b FREE UNIVERSITY OF BRUSSELS   (Belgium)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

650 nm; High efficiency; Non resonant cavity; Optical power; Red; Thin film surface textured light emitting diode

Indexed keywords

MIRRORS; QUANTUM EFFICIENCY; SURFACE ROUGHNESS; TEXTURES; THIN FILMS;

EPITAXIAL LAYERS;

LIGHT EMITTING DIODES;

EID: 0141790417     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476566     Document Type: Conference Paper

References (5)

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3. N. Linder, S. Kugler, P. Stauss, K.P. Streubel, R. Wirth and H. Zull, "High- brightness AlGaInP light-emitting diodes using surface texturing", Proc. SPIE, 2001, 4278, pp. 19.
4. R. Windisch, C. Rooman, B. Dutta, A. Knobloch, G. Borghs, G. H. Döhler and P. Heremans., "Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes", IEEE J. Select. Topics in Quant. Elect., 2002, 8, 2, pp. 248-55.
5. C. Rooman, R. Windisch, M. D'Hondt, B. Dutta, P. Modak, P. Mijlemans, G. Borghs, R. Vounckx, I. Moerman, M. Kuijk and P. Heremans, "High-efficiency thin-film light- emitting diodes at 650 nm", Electr. Letters, 2001, 37, 13, pp. 852-3.