High-efficiency thin-film light-emitting diodes at 650 nm

Electronics Letters

Volumn 37, Issue 13, 2001, Pages 852-853

  Rooman, C ^a   Windisch, R ^a   D'Hondt, M ^b   Dutta, B ^a   Modak, P ^c   Mijlemans, P ^b   Borghs, G ^a   Vounckx, R ^d   Moerman, I ^c   Kuijk, M ^d   Heremans, P ^a  

^a IMEC   (Belgium)

^b Advanced Materials ^*  (Belgium)

^c GHENT UNIVERSITY   (Belgium)

^d FREE UNIVERSITY OF BRUSSELS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS;

SURFACE TEXTURED THIN FILMS;

LIGHT EMITTING DIODES;

EID: 0035927520     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010549     Document Type: Article

References (7)

1. 0.5P/GaP light-emitting diodes exhibiting > 50% external quantum efficiency
2. Efficient light-emitting diodes with radial outcoupling taper at 980 nm and 630 nm emission wavelength
3. High-brightness AlGaInP light-emitting diodes using surface texturing
4. Red and orange resonant-cavity LEDs
5. Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power
6. 30% external quantum efficiency from surface textured, thin-film light-emitting diodes
7. 40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography