High-quality CVD/thermal stacked gate oxide films with hydrogen-free CVD SiO2 formed in a SiCl4-N2O system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1360-1363

  Ogata, Tamotsu ^a   Kobayashi, Kiyoteru ^a   Watanabe, Hajime ^a   Kurokawa, Hiroshi ^a   Matsui, Yasuji ^a   Hirayama, Makoto ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

CVD; Electron trap; Hot carrier; Hydrogen free system; Nitrous oxide; Reliability; Silicon oxide; Stacked oxide; Tetrachlorosilane

Indexed keywords

EID: 0342344650     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1360     Document Type: Article

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