MoSi Etch of phase-shift masks

Journal of Microlithography, Microfabrication and Microsystems

Volumn 2, Issue 1, 2003, Pages 54-60

  Wu, Banqiu ^a   Chan, David ^a  

^a PHOTRONICS INC   (United States)

Author keywords

Embedded attenuated phase shift masks; Etch; MoSi; Phase shift masks; Photomask; Plasma

Indexed keywords

EID: 0141733023     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1530570     Document Type: Article

References (4)

1. C. Constantine, D. Johnson, R. J. Westennan, and A. Hourd, "Induc-tively coupled plasma etch of DUV MoSi photomasks: a designed study of etch chemistries and process results," BACUS Symposium on Photomask Technology and Management, Proc. SPIE 3546, 88-97 (1998).
2. M. Ushida, M. Mitsui, K. Okada, Y. Ohkubo, H. Suda, H. Kobayashi, and K. Asakawa, "Development of deep UV MoSi-based embedded phase-shiftins mask (EPSM) blanks," Proc. SPIE 2884, 403-410 (1996).
3. R. J. Shul and S. J. Pearton, Eds., Handbook of Advanced Plasma Processing Techniques, pp. 45-51 and 260-263, Springer-Verlag, Berlin, Germany (2000).
4. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Dis-cliarges anil Materials Processing, p. 288, Wiley-Interscience, New York (1994).