-
2
-
-
0000184115
-
Miscibility gaps in quaternary III/V alloys
-
G. Stringfellow, "Miscibility gaps in quaternary III/V alloys", J. Crystal Growth, 58, 194-202, 1982.
-
(1982)
J. Crystal Growth
, vol.58
, pp. 194-202
-
-
Stringfellow, G.1
-
3
-
-
4243991297
-
1-y epitaxial layers
-
1-y epitaxial layers", Phys. Rev. B, 45(12), 6614-6622, 1992.
-
(1992)
Phys. Rev. B
, vol.45
, Issue.12
, pp. 6614-6622
-
-
McDevitt, T.L.1
Mahajan, S.2
Laughlin, D.E.3
Bonner, W.A.4
Keramidas, V.G.5
-
4
-
-
0041924335
-
Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers
-
D. Gonzalez, G. Aragon, D. Araujo, M.J. de Castro, and R. Garcia, "Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers", Appl. Phys. Lett., 74(18), 2649-2651, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.18
, pp. 2649-2651
-
-
Gonzalez, D.1
Aragon, G.2
Araujo, D.3
De Castro, M.J.4
Garcia, R.5
-
5
-
-
0042691348
-
Control of phase modulation in InGaAs epilayers
-
D. Gonzalez, G. Aragon, D. Araujo, and R. Garcia, "Control of phase modulation in InGaAs epilayers", Appl. Phys. Lett., 76(22), 3236-3238, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.76
, Issue.22
, pp. 3236-3238
-
-
Gonzalez, D.1
Aragon, G.2
Araujo, D.3
Garcia, R.4
-
6
-
-
0001001494
-
2 studied by optical spectroscopy
-
2 studied by optical spectroscopy", Phys. Stat. Sol. (B), 193, 213-228, 1996.
-
(1996)
Phys. Stat. Sol. (B)
, vol.193
, pp. 213-228
-
-
Ernst, P.1
Geng, C.2
Scholz, F.3
Schweizer, H.4
-
7
-
-
0022028887
-
1-y epitaxial layers
-
1-y epitaxial layers", Phil. Mag. A, 51(3), 389-417, 1985.
-
(1985)
Phil. Mag. A
, vol.51
, Issue.3
, pp. 389-417
-
-
Treacy, M.1
Gibson, J.M.2
Howie, A.3
-
8
-
-
0141706040
-
Current status of atomic ordering and phase separation in ternary and quaternary III-V compound semiconductors
-
sect. 3, IOP Publishing Ltd
-
S. Mahajan, M. Shahid, and D. Laughlin, "Current status of atomic ordering and phase separation in ternary and quaternary III-V compound semiconductors", Microscopy of Semiconducting Materials, Inst. Phys. Conf. Ser. No. 100 sect. 3, 143-153, IOP Publishing Ltd. 1989.
-
(1989)
Microscopy of Semiconducting Materials, Inst. Phys. Conf. Ser.
, vol.100
, pp. 143-153
-
-
Mahajan, S.1
Shahid, M.2
Laughlin, D.3
-
9
-
-
25744450814
-
Direct observation of phonons generated during nonradiative capture in GaAs p-n junctions
-
V. Narayanamurti, R.A. Logan, and M.A. Chin, "Direct observation of phonons generated during nonradiative capture in GaAs p-n junctions", Phys. Rev. Lett., 40 63-66, 1978.
-
(1978)
Phys. Rev. Lett.
, vol.40
, pp. 63-66
-
-
Narayanamurti, V.1
Logan, R.A.2
Chin, M.A.3
-
10
-
-
0141482681
-
Permanent degradation of GaAs tunnel diodes
-
R.D. Gold and L.R. Weisberg, "Permanent degradation of GaAs tunnel diodes", Solid State Electron, 7, 811-821, 1964.
-
(1964)
Solid State Electron
, vol.7
, pp. 811-821
-
-
Gold, R.D.1
Weisberg, L.R.2
-
11
-
-
0000264412
-
Observation of recombination-enhanced defect reactions in semiconductors
-
D.V. Lang and L.C. Kimerling, "Observation of recombination-enhanced defect reactions in semiconductors", Phys. Rev. Lett., 33(8), 489-492, 1974.
-
(1974)
Phys. Rev. Lett.
, vol.33
, Issue.8
, pp. 489-492
-
-
Lang, D.V.1
Kimerling, L.C.2
-
12
-
-
3743120146
-
Nonradiative recombination at deep levels in GaAs and GaP by Lattice-Relaxation Multiphonon Emission
-
D.V. Lang and C.H. Henry, "Nonradiative recombination at deep levels in GaAs and GaP by Lattice-Relaxation Multiphonon Emission", Phys. Rev. Lett., 35(22) 1525-1528, 1975.
-
(1975)
Phys. Rev. Lett.
, vol.35
, Issue.22
, pp. 1525-1528
-
-
Lang, D.V.1
Henry, C.H.2
-
13
-
-
84915617066
-
Kink formation and migration as dependent on the Fermi level
-
P. Haasen, "Kink formation and migration as dependent on the Fermi level", J. De Physique, 40(C6) 111-116, 1979.
-
(1979)
J. De Physique
, vol.40
, Issue.C6
, pp. 111-116
-
-
Haasen, P.1
-
14
-
-
36749105690
-
Injection-stimulated dislocation motion in semiconductors
-
L.C. Kimerling, P.Petroff, and H.J. Leamy, "Injection-stimulated dislocation motion in semiconductors", Appl. Phys. Lett., 28(6), 297-300, 1976.
-
(1976)
Appl. Phys. Lett.
, vol.28
, Issue.6
, pp. 297-300
-
-
Kimerling, L.C.1
Petroff, P.2
Leamy, H.J.3
-
15
-
-
0001318334
-
Defect structure introduced during operation of heterojunction GaAs lasers
-
P. Petroff and R.L. Hartman, "Defect structure introduced during operation of heterojunction GaAs lasers", Appl. Phys. Lett., 23(8), 469-471, 1973.
-
(1973)
Appl. Phys. Lett.
, vol.23
, Issue.8
, pp. 469-471
-
-
Petroff, P.1
Hartman, R.L.2
-
16
-
-
0002869185
-
Origin of the time dependence of wet oxidation of AlGaAs
-
C.H. Ashby, M.M. bridges, A.A. Allerman, B.E. Hammons, H.Q Hou, "Origin of the time dependence of wet oxidation of AlGaAs", Appl. Phys. Lett,. 75(1), 73-75, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, Issue.1
, pp. 73-75
-
-
Ashby, C.H.1
Bridges, M.M.2
Allerman, A.A.3
Hammons, B.E.4
Hou, H.Q.5
-
17
-
-
0001529006
-
Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation
-
S. Guha, F. Agahi, B. Pezeshki, J. A. Kish, D.W. Kisker, and N.A. Bojarczuk, "Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation", Appl. Phys. Lett., 68(7), 906-908, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, Issue.7
, pp. 906-908
-
-
Guha, S.1
Agahi, F.2
Pezeshki, B.3
Kish, J.A.4
Kisker, D.W.5
Bojarczuk, N.A.6
-
18
-
-
0004021717
-
-
Cambridge University Press, Cambridge, UK
-
C. Wilmsen, H. Temkin, and L.A. Coldren, Vertical-Cavity Surface-Emitting Lasers, Cambridge University Press, Cambridge, UK, 1999.
-
(1999)
Vertical-Cavity Surface-Emitting Lasers
-
-
Wilmsen, C.1
Temkin, H.2
Coldren, L.A.3
-
19
-
-
0141482680
-
A model for the degradation of Ga(Al)As single-quantum-well lasers
-
R.B. Martins, O. Henoc, B. Akamatsu, and J.F. Palmier, "A model for the degradation of Ga(Al)As single-quantum-well lasers", J. Appl. Phys., 70(2), 554-561, 1991.
-
(1991)
J. Appl. Phys.
, vol.70
, Issue.2
, pp. 554-561
-
-
Martins, R.B.1
Henoc, O.2
Akamatsu, B.3
Palmier, J.F.4
-
21
-
-
0032188331
-
Gradual degradation in 850-nm vertical-cavity surface-emitting lasers
-
R.W. Herrick, and P.M. Petroff, "Gradual degradation in 850-nm vertical-cavity surface-emitting lasers", IEEE J. Quantum Electronics, 34(10), 1963-1969, 1998.
-
(1998)
IEEE J. Quantum Electronics
, vol.34
, Issue.10
, pp. 1963-1969
-
-
Herrick, R.W.1
Petroff, P.M.2
-
22
-
-
0016561192
-
Rapid degradation in double-heterostructure lasers. I. Proposal of a new model for the directional growth of dislocation networks
-
J. Matsui, K. Ishida, and Y. Nannichi, "Rapid degradation in double-heterostructure lasers. I. Proposal of a new model for the directional growth of dislocation networks", Jap. J Appl. Phys., 14(10), 1555-1560, 1975.
-
(1975)
Jap. J Appl. Phys.
, vol.14
, Issue.10
, pp. 1555-1560
-
-
Matsui, J.1
Ishida, K.2
Nannichi, Y.3
-
23
-
-
0141594218
-
An AlGaAs double-heterojunction bipolar transistor grown by molecular-beam epitaxy
-
P. Berger, N. Chand, and N. Dutta, "An AlGaAs double-heterojunction bipolar transistor grown by molecular-beam epitaxy", Appl. Phys. Lett., 59(9), 1099-1101, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, Issue.9
, pp. 1099-1101
-
-
Berger, P.1
Chand, N.2
Dutta, N.3
-
24
-
-
0027625265
-
Transport length variation due to dopant gradients in AlGaAs
-
G. Grummt, G. Oelgart, and N. Puhlmann, "Transport length variation due to dopant gradients in AlGaAs", Semiconductor Science & Technology, 8(7), 1191-1195, 1993.
-
(1993)
Semiconductor Science & Technology
, vol.8
, Issue.7
, pp. 1191-1195
-
-
Grummt, G.1
Oelgart, G.2
Puhlmann, N.3
-
25
-
-
0028462129
-
Comparison of the lateral carrier transport between a GaAs single quantum well and the AlGaAs barrier during cathodoluminescence excitation
-
D. Araujo, G. Oelgart, J. Ganiere, and F. Reinhart, "Comparison of the lateral carrier transport between a GaAs single quantum well and the AlGaAs barrier during cathodoluminescence excitation", J. Appl. Phys., 76(1), 342-346, 1994.
-
(1994)
J. Appl. Phys.
, vol.76
, Issue.1
, pp. 342-346
-
-
Araujo, D.1
Oelgart, G.2
Ganiere, J.3
Reinhart, F.4
-
26
-
-
0013408651
-
1-xS
-
1-xS", Appl. Phys. Lett., 55(25), 2622-2624, 1989.
-
(1989)
Appl. Phys. Lett.
, vol.55
, Issue.25
, pp. 2622-2624
-
-
Zarem, H.1
Lebens, J.2
Nordstrom, K.3
Sercel, P.4
Sanders, S.5
Eng, L.6
Yariv, A.7
Vahala, K.8
-
27
-
-
0017943439
-
1-xAs stripe-geometry DH lasers
-
1-xAs stripe-geometry DH lasers", J. Appl. Phys., 49(3), 1031-1044, 1978.
-
(1978)
J. Appl. Phys.
, vol.49
, Issue.3
, pp. 1031-1044
-
-
Tsang, W.1
-
28
-
-
0141594222
-
-
Personal communication with Kent Choquette, University of Illinois, Urbana Champaign
-
Personal communication with Kent Choquette, University of Illinois, Urbana Champaign.
-
-
-
-
29
-
-
0031380887
-
Electrical and optical losses in dielectrically apertured vertical cavity lasers
-
B. Thibeault, E. Hegblom, Y. Akulova, J. Ko, R. Naone, L. Coldren, and P. Floyd, "Electrical and optical losses in dielectrically apertured vertical cavity lasers", Vertical Cavity Surface Emitting Lasers, 3003, 86-99, 1997.
-
(1997)
Vertical Cavity Surface Emitting Lasers
, vol.3003
, pp. 86-99
-
-
Thibeault, B.1
Hegblom, E.2
Akulova, Y.3
Ko, J.4
Naone, R.5
Coldren, L.6
Floyd, P.7
-
30
-
-
0019015718
-
Current-crowded carrier confinement in double-heterostructure lasers
-
W. Joyce, "Current-crowded carrier confinement in double-heterostructure lasers", J. Appl. Phys., 51(5), 2394-2401, 1980.
-
(1980)
J. Appl. Phys.
, vol.51
, Issue.5
, pp. 2394-2401
-
-
Joyce, W.1
-
31
-
-
0011200132
-
Defect structure of degraded heterojunction GaAlAs-GaAs lasers
-
P.W. Hutchinson, P.S. Dobson, S. O'Hara, and G.H. Newman, "Defect structure of degraded heterojunction GaAlAs-GaAs lasers", Appl. Phys. Lett., 26(5), 250-252, 1975.
-
(1975)
Appl. Phys. Lett.
, vol.26
, Issue.5
, pp. 250-252
-
-
Hutchinson, P.W.1
Dobson, P.S.2
O'Hara, S.3
Newman, G.H.4
-
32
-
-
0012767632
-
The origin on dislocation climb during laser operation
-
O'Hara, P.W. Hutchinson, and P.S. Dobson, "The origin on dislocation climb during laser operation", Appl. Phys. Lett., 30(8), 368-371, 1977.
-
(1977)
Appl. Phys. Lett.
, vol.30
, Issue.8
, pp. 368-371
-
-
O'Hara1
Hutchinson, P.W.2
Dobson, P.S.3
-
33
-
-
0016102156
-
Rapid degradation phenomenon in heterojuction GaAlAs-GaAs lasers
-
P. Petroff and R.L. Hartman, "Rapid degradation phenomenon in heterojuction GaAlAs-GaAs lasers", J. Appl. Phys., 45(9), 3899-3903, 1974.
-
(1974)
J. Appl. Phys.
, vol.45
, Issue.9
, pp. 3899-3903
-
-
Petroff, P.1
Hartman, R.L.2
-
34
-
-
0141594215
-
xAs-GaAs double-heterojunction laser structures
-
xAs-GaAs double-heterojunction laser structures", Appl. Phys. Lett., 25(4), 226-228, 1974.
-
(1974)
Appl. Phys. Lett.
, vol.25
, Issue.4
, pp. 226-228
-
-
Petroff, P.1
Johnston D., Jr.2
Hartman, R.L.3
-
35
-
-
0016102587
-
Formation of interface states and defects in GaAs-Al,Gal-xAs DH lasers under room-temperature cw operation
-
E.S. Yang, "Formation of interface states and defects in GaAs-Al,Gal-xAs DH lasers under room-temperature cw operation", J. Appl. Phys., 45, 3801-3805, 1974.
-
(1974)
J. Appl. Phys.
, vol.45
, pp. 3801-3805
-
-
Yang, E.S.1
-
36
-
-
0141594220
-
Native defects and stoichiometry in GaAlAs
-
G.M. Blom, "Native defects and stoichiometry in GaAlAs", J. Cryst. Growth, 36, 125-137, 1976.
-
(1976)
J. Cryst. Growth
, vol.36
, pp. 125-137
-
-
Blom, G.M.1
-
37
-
-
0141817363
-
Degradation mechanism of GaAs/AlGaAs quantum well laser
-
M.M. Sobolev, A.V. Gittsovich, M.I. Papenstev, I.V. Kochnev, and B.S. Yavich, "Degradation mechanism of GaAs/AlGaAs quantum well laser", Sov. Phys. Semicond., 26(10), 985-989, 1992.
-
(1992)
Sov. Phys. Semicond.
, vol.26
, Issue.10
, pp. 985-989
-
-
Sobolev, M.M.1
Gittsovich, A.V.2
Papenstev, M.I.3
Kochnev, I.V.4
Yavich, B.S.5
-
38
-
-
0141817366
-
-
Personal communication with Kent Choquette, Department of Electrical Engineering, University of Illinois
-
Personal communication with Kent Choquette, Department of Electrical Engineering, University of Illinois.
-
-
-
-
39
-
-
0141594219
-
-
Personal communication with James Guenter, Honeywell VCSEL Products Division, Richardson TX
-
Personal communication with James Guenter, Honeywell VCSEL Products Division, Richardson TX.
-
-
-
|