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Volumn 5040 I, Issue , 2003, Pages 477-486

Relation between electron- and photon-caused oxidation in EUVL optics

Author keywords

Electrons; ETS; Extreme ultraviolet; Multilayer mirror; Oxidation; Photoelectrons

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON BEAMS; ELECTRONS; LIGHT REFLECTION; MIRRORS; OPTICAL MULTILAYERS; OPTICS; OXIDATION; PHOTONS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; VAPORS;

EID: 0141610699     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (16)
  • 7
    • 0141542866 scopus 로고    scopus 로고
    • Hamamatsu G1127-02 GaAsP photodiode , ̃ 1/8 A/W responsivity at 92.3 eV
    • Hamamatsu G1127-02 GaAsP photodiode , ̃ 1/8 A/W responsivity at 92.3 eV
  • 16
    • 0003699181 scopus 로고
    • Silicon processing for the VLSI era
    • Chap. 7 (Lattice Press, Sunset Beach, CA)
    • A review of, and references related to, the oxidation of Si is given in S. Wolf and R. N. Tauger, "Silicon Processing for the VLSI Era," Chap. 7 (Lattice Press, Sunset Beach, CA, 1986).
    • (1986)
    • Wolf, S.1    Tauger, R.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.