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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 7 B, 2003, Pages

Praseodymium-substituted strontium bismuth tantalate films with saturated remanent polarization at 1 V

(2) Aizawa, Koji a Ishiwara, Hiroshi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Ferroelectric memory; Ferroelectric properties; Praseodymium; Site engineering; SrBi2 Ta2O9

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTROMAGNETIC WAVE PROPAGATION; FERROELECTRIC THIN FILMS; FILM PREPARATION; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; REMANENCE; SUBSTITUTION REACTIONS; THICK FILMS; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC MEMORY; POLARIZATION SWITCHING; PRASEODYMIUM SUBSTITUTED STRONTIUM BISMUTH TANTALATE FILMS; SITE ENGINEERING; SOL-GEL METHOD;

STRONTIUM COMPOUNDS;

EID: 0141606711 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l840 Document Type: Letter

Times cited : (10)

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