Low dark current InGaAs(P)/InP p-i-n photodiodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4249-4252

  Chen, Yen Wei ^a   Hsu, Wei Chou ^a   Hsu, Rong Tay ^b   Wu, Yue Huei ^b   Chen, Yeong Jia ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

Author keywords

InxGa1 xAsyP1 y; LP MOCVD; PIN photodiode

Indexed keywords

CURRENT DENSITY; ENERGY GAP; EPITAXIAL GROWTH; LEAKAGE CURRENTS; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODIODES; SEMICONDUCTOR DEVICE MANUFACTURE;

DARK CURRENT; DARK CURRENT DENSITY; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; NARROW BAND GAP;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0141606658     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4249     Document Type: Article

References (17)

1. S. Miura, H. Kuwatsuka, T. Mikawa and O. Wada: J. Lightwave Technol. 5 (1987) 1371.
2. K. S. Park, D. K. Oh, H. M. Kim and K. E. Pyun: IEE Electron Lett. 34 (1998) 79.
3. N. Emeis, M. Schier, L. Hoffmann, H. Heinecke and B. Baur: IEE Electron Lett. 28 (1992) 344.
4. N. Susa, H. Nakagome, O. Mikami, H. Ando and H. Kanbe: IEEE J. Quantum Electron. 16 (1980) 864.
5. T. P. Lee, C. A. Burrus and A. G. Dentai: IEEE J. Quantum Electron. 17 (1981) 232.
6. C. L. Ho, M. C. Wu, W. J. Ho, J. W. Liaw and H. L. Wang: IEEE J. Quantum Electron. 36 (2000) 333.
7. S. R. Forrest, I. Camlibel, O. K. Kim, H. J. Stocker and J. R. Zuber: IEEE Electron Device Lett. 2 (1981) 283.
8. P. Berthier, L. Giraudet, A. Scavennec, D. Rigaud, M. Valenza, J. I. Davies and S. W. Bland: J. Lightwave Technol. 12 (1994) 2131.
9. N. Shimizu, K. Murata, A. Hirano, Y. Miyamoto, H. Kitabayashi, Y. Umeda, T. Akeyoshi, T. Furuta and N. Watanbe: IEE Electron Lett. 36 (2000) 1220.
10. Y. Muramoto, K. Kato, Y. Akahori, M. Ikeda, A. Kozen and Y. Itaya: IEEE Photon. Technol. Lett. 7 (1995) 685.
11. M. J. Kim, D. K. Kim, S. J. Kim and M. B. Das: IEEE Trans. Electron Devices 44 (1997) 551.
12. M. Yung, J. Jensen, R. Walden, M. Rodwell, G. Raghavan, K. Eliott and W. Stanchina: IEEE J. Solid-State Circ. 34 (1999) 219.
13. M. Gallant, N. Puetz, A. Zemel and F. R. Shepherd: Appl. Phys. Lett. 52 (1988) 733.
14. O. K. Kim, B. V. Dutt, R. J. Mccoy and J. R. Zuber: IEEE J. Quantum Electron. 21 (1985) 138.
15. I. Kim, D. G. Chang and P. D. Dapkus: J. Cryst. Growth 195 (1996) 138.
16. S. R. Forrest: IEEE J. Quantum Electron. 17 (1981) 217.
17. M. B. Yi, J. Paslaski, Y. Y. Liu, T. R. Chen and A. Yariv: IEE Electron Lett. 24 (1988) 455.