Effectiveness of the pseudowindow for edge-coupled InP-InGaAs-InP PIN photodiodes

IEEE Journal of Quantum Electronics

Volumn 36, Issue 3, 2000, Pages 333-339

  Ho, Chong Long ^a   Wu, Meng Chyi ^a   Ho, Wen Jeng ^b   Liaw, Jy Wang ^b   Wang, Hai Lin ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; BANDWIDTH; FIBER OPTICS; LIGHTING; OPTICAL COMMUNICATION; PHOTOCURRENTS; PROTECTIVE COATINGS; QUANTUM EFFICIENCY; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

CLEAVING PROCESS; DARK CURRENT; EDGE COUPLED PHOTODIODES; FIBER OPTIC COMMUNICATION; PSEUDOWINDOW; RESPONSIVITY;

PHOTODIODES;

EID: 0033891215     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.825880     Document Type: Article

References (19)

1. R. H. Saul, F. S. Chen, and P. W. Shumate Jr., "Reliability of InGaAs photodiodes for SL applications," AT&T Tech. J., vol. 64, pp. 861-883, 1985.
2. R. Mack, "Synchronizing chaotic circuits," Laser Focus/Electro-Optics, pp. 136-142, Dec. 1987.
3. J. E. Bowers and C. A. Burrus, "High-speed zero-bias waveguide photodetectors," Electron. Lett., vol. 22, pp. 905-906, 1986.
4. K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma, and M. Yaita, "110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-μm wavelength," IEEE Photon. Technol. Lett., vol. 6, pp. 719-721, 1994.
5. Y. Akatsu, Y. Muramoto, K. Kato, M. Ikeda, M. Ueki, A. Kozen, T. Kurosaki, K. Kawano, and J. Yoshida, "Long-wavelength multimode waveguide photodiodes suitable for hybrid optical module integrated with planar lightwave circuit," Electron. Lett., vol. 31, pp. 2098-2100, 1995.
6. K. Kato, M. Yuda, A. Kozen, Y. Muramoto, K. Noguchi, and O. Nakajima, "Selective-area impurity-doped planar edge-coupled waveguide photodiode (simple-WGPD) for low-cost, low-power-consumption optical hybrid modules," Electron. Lett., vol. 32, pp. 2078-2079, 1996.
7. T. Takeuchi, K. Makita, and K. Taguchi, "A planar slab-waveguide photodiode with a pseudowindow region in front of the waveguide," IEEE Photon. Technol. Lett., vol. 10, pp. 255-257, 1998.
8. V. M. Andreev, A. T. Gorelenok, M. Z. Zhingarev, L. E. Klyachkin, V. V. Mamutin, N. M. Saradzhishvili, V. I. Skopina, O. V. Sulima, and N. M. Shmidt, "Investigation of leakage currents in planar p-n junctions in InP and in p-i-n InGaAs/lnP structures," Sov. Phys. Semicond., vol. 19, pp. 411-414, 1985.
9. M. Seto, R. J. Deri, L. M. Schiavone, R. Bhat, J. B. D. Soole, H. Schumacher, N. C. Andreadakis, and M. Koza, "Fabrication of InP/InGaAs photodiodes for high bit rate communication by reactive ion etching," Electron. Lett., vol. 27, pp. 911-913, 1991.
10. A. Alping, "Waveguide pin photodetectors: Theoretical analysis and design criteria," Proc. Inst. Elect. Eng., pt. J, vol. 136, pp. 177-182, 1989.
11. J. Harari, F. Journet, O. Rabii, G. H. Jin, J. P. Vilcot, and D. Decoster, "Modeling of waveguide PIN photodetectors under very high optical power," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2304-2310, 1995.
12. L. Giraudet, F. Banfi, S. Demiguel, and G. Herve-Gruyer, "Optical design of evanescently coupled, waveguide-fed photodiodes for ultrawide-band applications," IEEE Photon. Technol. Lett., vol. 11, pp. 111-113, 1999.
13. K. J. Williams, R. D. Esman, and M. Dagenais, "Effects of high space-charge fields on the response of microwave photodetectors," IEEE Photon. Technol. Lett., vol. 6, pp. 639-641, 1994.
14. J. E. Bowers and C. A. Burrus, "Ultrawide-band long-wavelength p-i-n photodetectors," J. Lightwave Technol., vol. LT-5, pp. 1339-1350, 1987.
15. G. Lucovsky, R. F. Schwarz, and R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys., vol. 35, pp. 622-628, 1964.
16. P. Hill, J. Schlafer, W. Powazinik, M. Urban, E. Eichen, and R. Olshansky, "Measurement of hole velocity in n-type InGaAs," Appl. Phys. Lett., vol. 50, pp. 1260-1262, 1987.
17. 0.53 As over the wavelength range 1.0-1.7 μm," Electron Lett., vol. 21, pp. 1187-1189, 1985.
18. D. Wake, T. P. Spooner, S. D. Perrin, and I. D. Henning, "50 GHz InGaAs edge-coupled pin photodetector," Electron. Lett., vol. 27, pp. 1073-1075, 1991.
19. D. Wake, R. H. Walling, I. D. Henning, and D. G. Parker, "Planar-junction top-illuminated GaInAs/InP p-i-n photodiodes with bandwidth of 25 GHz," Electron. Lett., vol. 25, pp. 967-968, 1989.