PZT(65/35) and PLZT(8/65/35) thin films by sol-gel process: A comparative study on the structural, microstructural and electrical properties

Thin Solid Films

Volumn 443, Issue 1-2, 2003, Pages 14-22

  Thomas, Reji ^a,b   Mochizuki, Shoichi ^a   Mihara, Toshiyuki ^a   Ishida, Tadashi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Dielectric properties; Ferroelectric properties; Lead lanthanum zirconium titanate; Lead zirconium titanate; Sol gel

Indexed keywords

ANNEALING; COERCIVE FORCE; CRYSTAL STRUCTURE; CRYSTALLIZATION; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; MICROSTRUCTURE; MORPHOLOGY; PERMITTIVITY; PEROVSKITE; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON; SOL-GELS;

PLATINIZED SILICON;

THIN FILMS;

EID: 0141530980     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00926-X     Document Type: Article

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