Ultimate Solution for Low Thermal Budget Gate Spacer and Etch Stopper to Retard Short Channel Effect in Sub-90nm Devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 55-56

  Yang, Jong Ho ^a   Park, Jae Eun ^a   Lee, Joo Won ^a   Chu, Kang Soo ^a   Ku, Ja Hum ^a   Park, Moon Han ^a   Lee, Nae In ^a   Kang, Hee Sung ^a   Oh, Myung Hwan ^a   Lee, Jun Ha ^a   Kang, Ho Kyu ^a   Suh, Kwang Pyuk ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

ALD SIN; ALD SiO2; Low Thermal Budget; Short Channel Effect

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DELAY CIRCUITS; ETCHING; MOSFET DEVICES; STATIC RANDOM ACCESS STORAGE; THERMAL EFFECTS; BUDGET CONTROL; SILICA; SILICIDES; SILICON NITRIDE;

RETARD SHORT CHANNEL EFFECT;

GATES (TRANSISTOR); THRESHOLD VOLTAGE;

ALD SIN; ALD SIO2; BLOCKING LAYERS; CMOSFETS; DRIVE CURRENTS; GATE ETCH; GATE SPACERS; LOW THERMAL BUDGET; ROLL-OFF CHARACTERISTICS; SHORT-CHANNEL EFFECT;

EID: 0141426834     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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