Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

Solid-State Electronics

Volumn 47, Issue 11, 2003, Pages 1989-1994

  Huang, H K ^a   Wang, C S ^a   Wang, Y H ^a   Wu, C L ^b   Chang, C S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Transcom Inc   (Taiwan)

Author keywords

InGaP PHEMT; Temperature effects

Indexed keywords

LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

NOISE PERFORMANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0043231409     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00217-X     Document Type: Article

References (11)

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