Nanoscale arrangement in the GexAs(Sb)40-xS 60 systems

Journal of Optoelectronics and Advanced Materials

Volumn 4, Issue 1, 2002, Pages 3-12

  Vateva, E ^a   Skordeva, E ^a  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

GeAs(Sb) S glasses and films; Topological threshold; Transformations induced by light electron and gamma rays

Indexed keywords

GLASS; IRRADIATION; NANOTECHNOLOGY; PHYSICOCHEMICAL PROPERTIES;

CHEMICAL TRANSITION; GAMMA IRRADIATION; NANO SCALE; THREE-DIMENSIONAL TRANSITION; TOPOLOGICAL THRESHOLD;

GAMMA RAYS;

EID: 0043220680     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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