The topological phase transition in some Ge-Sb-S glasses and thin films

Journal of Physics and Chemistry of Solids

Volumn 55, Issue 7, 1994, Pages 575-578

  Savova, E ^a   Skordeva, E ^a   Vateva, E ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

A. amorphous material; A. chalcogenides; D. optical properties; D. phase transitions

Indexed keywords

AMORPHOUS MATERIALS; ANTIMONY; ARSENIC; ENERGY GAP; GERMANIUM COMPOUNDS; METALLIZING; OPTICAL PROPERTIES; PHASE TRANSITIONS; SOLUBILITY; THIN FILMS;

ATOMIC DENSITY; ATOMIC VOLUME; CHALCOGENIDES; COMPACTNESS; METALLIZATION; TOPOLOGICAL PHASE TRANSITION;

GLASS;

EID: 0028462198     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3697(94)90055-8     Document Type: Article

References (16)

1. Some physical properties of the glassy (GeS2)x(Sb2S3)1−x system
2. Raman spectra of Ge-S-Sb film
3. Average coordination number dependence of photostructural changes in amorphous Ge-As-S films
4. Photoinduced effects in Ge-Sb-S glasses and amorphous layers
5. The structure of the glassy Ge-Sb-S system and its connection with the MRO structures of GeS2 and Sb2S3
6. Selective Etching and Photo—Bleaching in Thin Amorphous Ge—Sb—S Films