SCOPUS 정보 검색 플랫폼

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 607-610

A new compact Horizontal Current Bipolar Transistor (HCBT) fabricated in (110) wafers

(4) Suligoj, T a Wang, K L a Koricic, M b Bilijanovic, P b

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF ZAGREB (Croatia)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON WAFERS;

ACTIVE TRANSISTORS; DOPANT DISTRIBUTION; HIGH FREQUENCY PERFORMANCE; HORIZONTAL CURRENT BIPOLAR TRANSISTOR; INTRINSIC TRANSISTOR; LATERAL BIPOLAR TRANSISTORS; SIDEWALL ROUGHNESS; SIMPLE TECHNOLOGY;

TRANSISTORS;

EID: 0043190276 PISSN: 19308876 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ESSDERC.2002.195004 Document Type: Conference Paper

Times cited : (2)

References (7)

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