ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages 447-450

  Schreurs, D ^a   Verspecht, J ^b   Vandamme, E ^e   Vellas, N ^c   Gaquiere, C ^c   Germain, M ^d   Borghs, G ^d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b Jan Verspecht bvba   (Belgium)

^c INSTITUT D ELECTRONIQUE   (France)

^d IMEC   (Belgium)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; NEURAL NETWORKS; POWER AMPLIFIERS;

SELF-HEATING EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0043166423     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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