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Volumn 2, Issue , 2003, Pages 817-821

Development of a High Voltage Intelligent Power Module (HVIPM)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); SHORT CIRCUIT CURRENTS; TRANSIENTS; VOLTAGE CONTROL; WAVEFORM ANALYSIS;

EID: 0043159115     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (5)
  • 1
    • 0030651022 scopus 로고    scopus 로고
    • Analysis for transient characteristics of shorted collector IGBTs in free wheeling mode of operation
    • Y. Tomomatsu, et al., Analysis for Transient Characteristics of Shorted Collector IGBTs in Free Wheeling Mode of Operation" Proc. ISPSD'97, pp. 209-212, 1997
    • (1997) Proc. ISPSD'97 , pp. 209-212
    • Tomomatsu, Y.1
  • 2
    • 0033355171 scopus 로고    scopus 로고
    • A new punch through IGBT having A new N-buffer layer
    • H. Iwamoto, et al., "A New Punch Through IGBT Having A New N-Buffer Layer" IEEE Industry Applications Society, pp. 692-699, 1999
    • (1999) IEEE Industry Applications Society , pp. 692-699
    • Iwamoto, H.1
  • 3
    • 0042374802 scopus 로고    scopus 로고
    • A 4.5kV-HVIGBT module family with low collector-emitter saturation voltage
    • H. Iwamato, et al., "A 4.5kV-HVIGBT Module Family with low Collector-Emitter Saturation Voltage" Proc. EPE'01, pp. 667-672, 2001
    • (2001) Proc. EPE'01 , pp. 667-672
    • Iwamato, H.1
  • 4
    • 84961716019 scopus 로고    scopus 로고
    • Development of 6.5kV class IGBT with wide safety operation area
    • K. Mochizuki, et al., "Development of 6.5kV Class IGBT with Wide Safety Operation Area", Proc. PCC'02, pp. 248-252, 2002
    • (2002) Proc. PCC'02 , pp. 248-252
    • Mochizuki, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.