Well-tempered combination of ultra-high voltage IGBT and diode rated 6.5kV

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 160-163

  Suekawa, E ^a   Ihoue, M ^a   Mochizuki, K ^b   Kawakami, M ^a   Minato, T ^a   Satoh, K ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Fukuryo Semicon Engineering Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DIODES; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; SWITCHING;

WELL-TEMPERED COMBINATION;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0041939719     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. H.Iwamoto, et.al. "A 4.5KV-HVIGBT Module Family with Low Collector-Emitter Saturation Voltage, " Proc. EPE'01, pp.667-672, 2001.
2. K.Mochizuki, et.al. "Development of 6.5kV class IGBT with wide safety operation area," Proc. PCC'02, pp.248-252, 2002.
3. Y.Tomomatsu, et.al. "Analysis for transient characteristics of shorted collector IGBTs in free wheeling mode of operation," Proc. ISPSD'97, pp.209-212, 1997.