High frequency parasitic effects for on-wafer packaging of RF MEMS switches

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2003, Pages 1931-1934

  Margomenos, Alexandros ^a   Katehi, Linda P B ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRONICS PACKAGING; FREQUENCIES; RESONANCE;

PARASITIC EFFECTS;

MICROELECTROMECHANICAL DEVICES;

EID: 0043092466     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A. Margomenos and L.P.B. Katehi, "DC to 40 GHz On-Wafer Package for RF MEMS Switches," IEEE Topical Meeting on Electronic Performance of Electronic Packaging, Digest of Papers., pp. 91-94, October 2002.
2. Ansoft Version 8.0, High-Frequency Structure Simulator, 2001.
3. K.H. Herrick, J.-G. Yook, S.V. Robertson, G.M. Rebeiz, and L.P.B. Katehi, "W-band Micromachined Vertical Interconnection for Three-Dimensional Microwave ICs," in 29th European Microwave Conference Proceedings, Munich, Germany, October 1999, pp. 402-405.
4. B Ziaie, J.A. Von Arx, M. Dokmeci, and K. Najafi, "A Hermetic Glass-Silicon Micropackage with High-Density On-Chip Feedthroughs for Sensors and Actuators," Journal of Microelectromechanical Systems, vol. 5, pp. 166-179, 1996.
5. M.G. Kovac, D. Chleck, and P. Goodman, "A New Moisture Sensor for In-Situ Monitoring of Sealed Package," Proc. Int. Reliabilty Physics Symposium, pp. 85-91, 1977.