Analysis of depth profile for impurity concentration in Si wafer by synchrotron radiation excited total reflection X-ray fluorescence spectroscopy

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 58, Issue 8, 2003, Pages 1445-1452

  Huh, Byung Kook ^a   Kim, Jae Song ^a   Shin, Nam Su ^a   Koo, Yang Mo ^a   Chung, Hye Young ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b LG Siltron Inc   (South Korea)

Author keywords

Depth profile; Si wafer; Synchrotron radiation total reflection X ray fluorescence (SR TXRF)

Indexed keywords

COATINGS; FLUORESCENCE; SILICON WAFERS; SYNCHROTRON RADIATION;

DEPTH PROFILE;

X RAY SPECTROSCOPY;

EID: 0043014595     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0584-8547(03)00103-4     Document Type: Conference Paper

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