Microstructural study of annealed Cr/Si system using cross-sectional TEM combined with nano-analysis

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 80-83

  Mirouh, K ^a   Bouabellou, A ^a   Halimi, R ^a   Mosser, A ^b   Ehret, G ^b  

^a Universite Mentouri Constantine   (Algeria)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

Cr Si system; Cross sectional TEM; Diffusion; Doped substrate; Interface

Indexed keywords

ANNEALING; CHROMIUM; CRYSTALLINE MATERIALS; DIFFUSION; DOPING (ADDITIVES); ELECTRON GUNS; HEAT TREATMENT; INTERFACES (MATERIALS); MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

SILICIDATION;

SILICON;

EID: 0043014567     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00633-5     Document Type: Conference Paper

References (10)

1. Olowolafe J.O., Nicolet M.A., Mayer J.W. Thin Solid Films. 38:1976;143.
2. Olowolafe J.O., Nicolet M.A., Mayer J.W. J. Appl. Phys. 47:1976;5182.
3. Tu K.N., Mayer J.W. Poate J.M., Tu K.N., Mayer J.W. Thin Films Interdiffusion and Reaction. 1978;Wiley, New York. Chapter 10.
4. Ottaviani G., Mayer J.W. Howes M.J., Morgan D.V. Reliability and Degradation. 1981;Wiley, New York. Chapter 2.
5. Galkin N.G., Velitchko T.V., Skripka S.V., Khrustalev A.B. Thin Solid Films. 280:1996;211.
6. Heck C., Kusaka M., Hirai M., Iwami M., Nakamura H. Jpn. J. Appl. Phys. 33:1994;6667.
7. Rockett A., Greene J.E. J. Appl. Phys. 64:1988;4187.
8. Torreo J., Thomas O., Jourdain D., Madar R., Perio A., Senateur J.P. J. Appl. Phys. 63:1988;732.
9. Mirouh K., Bouabellou A., Halimi R., Mosser A., Ehret G., Werckmann J. Mater. Sci. Eng. B73:2000;116.
10. Benouattas N., Halimi R., Bouabellou A., Mosser A. Thin Solid Films. 385:2001;61.