Transport properties of SINIS junctions with high-current density

IEEE Transactions on Applied Superconductivity

Volumn 13, Issue 2 I, 2003, Pages 1079-1084

  Born, F ^a   Cassel, D ^a   Ilin, K ^a   Klushin, A M ^a   Siegel, M ^a   Brinkman, A ^b   Golubov, A A ^b   Kupriyanov, M Yu ^c   Rogalla, H ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF TWENTE   (Netherlands)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Double barrier structures; Integrated circuits; Josephson junctions

Indexed keywords

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); ELECTRIC POTENTIAL; OXIDATION; PHOTOLITHOGRAPHY; TRANSPORT PROPERTIES;

HIGH-CURRENT DENSITY;

JOSEPHSON JUNCTION DEVICES;

EID: 0042941573     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2003.814160     Document Type: Conference Paper

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