-
1
-
-
0033359963
-
Analysis of interconnections with BCB for high-speed digital applications
-
Los Angeles, CA, USA
-
UMEDA, Y., OSAFUNE, K., ENOKI, T., YOKOYAMA, H., and ISHII, Y.: 'Analysis of interconnections with BCB for high-speed digital applications'. Proc. IEEE MTT-S, Los Angeles, CA, USA, 1999, pp. 205-208
-
(1999)
Proc. IEEE
, vol.MTT-S
, pp. 205-208
-
-
Umeda, Y.1
Osafune, K.2
Enoki, T.3
Yokoyama, H.4
Ishii, Y.5
-
2
-
-
0036712985
-
maxX SiGe technology
-
maxX SiGe technology', IEEE Electron Device Lett., 2002, 23, pp. 541-543
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 541-543
-
-
Jagannathan, B.1
Meghelli, M.2
Rylyakov, A.V.3
Groves, R.A.4
Chinthakindi, A.K.5
Schnabel, C.M.6
Ahlgren, D.A.7
Freeman, G.G.8
Stein, K.J.9
Subbanna, S.10
-
3
-
-
0036442434
-
In P HBT ring oscillator with 2.0 ps/stage gate delay
-
Monterey, CA, USA
-
SRIVASTAVA, N.K., RAGHAVAN, G., THIAGARAJAR, R., CASE, M.G., ARNOLD, E., POBANZ, C.W., NIELSEN, S.O., YEN, J.C., and JOHNSON, R.A.: 'InP HBT ring oscillator with 2.0 ps/stage gate delay'. Proc. IEEE GaAs IC Symp., Monterey, CA, USA, 2002, pp. 171-174
-
(2002)
Proc. IEEE GaAs IC Symp.
, pp. 171-174
-
-
Srivastava, N.K.1
Raghavan, G.2
Thiagarajar, R.3
Case, M.G.4
Arnold, E.5
Pobanz, C.W.6
Nielsen, S.O.7
Yen, J.C.8
Johnson, R.A.9
-
4
-
-
0028483175
-
Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors
-
KURISHIMA, K., NAKAJIMA, H., KOBAYASHI, T., MATSUOKA, Y., and ISHIBASHI, T.: 'Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors', IEEE Trans. Electron Devices, 1994, 41, pp. 1319-1326
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 1319-1326
-
-
Kurishima, K.1
Nakajima, H.2
Kobayashi, T.3
Matsuoka, Y.4
Ishibashi, T.5
-
5
-
-
0037004969
-
max InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
-
max InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base', IEEE Electron Device Lett., 2002, 23, pp. 694-696
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 694-696
-
-
Ida, M.1
Kurishima, K.2
Watanabe, N.3
-
6
-
-
0029252364
-
1-xAs base in abrupt-emitter InP/InGaAs heterojunction bipolar transistors
-
1-xAs base in abrupt-emitter InP/InGaAs heterojunction bipolar transistors', Jpn. J. Appl. Phys., 1995, pt. 1, 34, pp. 1221-1227
-
(1995)
Jpn. J. Appl. Phys.
, vol.34
, Issue.PART 1
, pp. 1221-1227
-
-
Kurishima, K.1
Nakajima, H.2
Yamahata, S.3
Kobayashi, T.4
Matsuoka, Y.5
-
7
-
-
0002300063
-
High-performance small InP/InGaAs HBT's with reduced parasitic base-collector capacitance fabricated using a novel base-metal design
-
Inst. Phys. Conf. Ser. No. 166, Birmingham, UK
-
IDA, M., YAMAHATA, S., NAKAJIMA, H., and WATANABE, N.: 'High-performance small InP/InGaAs HBT's with reduced parasitic base-collector capacitance fabricated using a novel base-metal design'. Proc. Int. Symp. on Compound Semiconductors (ISCS), 1999, Inst. Phys. Conf. Ser. No. 166, Birmingham, UK, pp. 293-296
-
(1999)
Proc. Int. Symp. on Compound Semiconductors (ISCS)
, pp. 293-296
-
-
Ida, M.1
Yamahata, S.2
Nakajima, H.3
Watanabe, N.4
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