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Volumn 39, Issue 16, 2003, Pages 1215-1217

3.48 ps ECL ring oscillator using over-300 GHz fT/f max InP DHBTs

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIGITAL CIRCUITS; ELECTRIC SPACE CHARGE; OSCILLATORS (ELECTRONIC); SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0042930865     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030782     Document Type: Article
Times cited : (9)

References (7)
  • 1
    • 0033359963 scopus 로고    scopus 로고
    • Analysis of interconnections with BCB for high-speed digital applications
    • Los Angeles, CA, USA
    • UMEDA, Y., OSAFUNE, K., ENOKI, T., YOKOYAMA, H., and ISHII, Y.: 'Analysis of interconnections with BCB for high-speed digital applications'. Proc. IEEE MTT-S, Los Angeles, CA, USA, 1999, pp. 205-208
    • (1999) Proc. IEEE , vol.MTT-S , pp. 205-208
    • Umeda, Y.1    Osafune, K.2    Enoki, T.3    Yokoyama, H.4    Ishii, Y.5
  • 4
    • 0028483175 scopus 로고
    • Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors
    • KURISHIMA, K., NAKAJIMA, H., KOBAYASHI, T., MATSUOKA, Y., and ISHIBASHI, T.: 'Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors', IEEE Trans. Electron Devices, 1994, 41, pp. 1319-1326
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1319-1326
    • Kurishima, K.1    Nakajima, H.2    Kobayashi, T.3    Matsuoka, Y.4    Ishibashi, T.5
  • 5
    • 0037004969 scopus 로고    scopus 로고
    • max InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
    • max InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base', IEEE Electron Device Lett., 2002, 23, pp. 694-696
    • (2002) IEEE Electron Device Lett. , vol.23 , pp. 694-696
    • Ida, M.1    Kurishima, K.2    Watanabe, N.3
  • 7
    • 0002300063 scopus 로고    scopus 로고
    • High-performance small InP/InGaAs HBT's with reduced parasitic base-collector capacitance fabricated using a novel base-metal design
    • Inst. Phys. Conf. Ser. No. 166, Birmingham, UK
    • IDA, M., YAMAHATA, S., NAKAJIMA, H., and WATANABE, N.: 'High-performance small InP/InGaAs HBT's with reduced parasitic base-collector capacitance fabricated using a novel base-metal design'. Proc. Int. Symp. on Compound Semiconductors (ISCS), 1999, Inst. Phys. Conf. Ser. No. 166, Birmingham, UK, pp. 293-296
    • (1999) Proc. Int. Symp. on Compound Semiconductors (ISCS) , pp. 293-296
    • Ida, M.1    Yamahata, S.2    Nakajima, H.3    Watanabe, N.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.