Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2464-2472

  Gottwaldt, L ^a   Pierz, K ^a   Ahlers, F J ^a   Gobel E O ^a   Nau, S ^b   Torunski, T ^b   Stolz, W ^b  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); LUMINESCENCE; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE ROUGHNESS; ULTRAHIGH VACUUM;

TERRACE STRUCTURES;

HETEROJUNCTIONS;

EID: 0042924110     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1588360     Document Type: Article

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