The role of spreading resistance profiling in manufacturing control and technology development

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1497-1502

  Lin Kwang, J ^a   Ramey, S ^b   Reynes, J M ^a   Hillard, R J ^b   Thieme, T ^c  

^a MOTOROLA INC   (United States)

^b Solid State Measurements Inc   (United States)

^c Solid State Measurements GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042914908     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00109-8     Document Type: Article

References (7)

1. R. G. Mazur and D. H. Dickey, "A Spreading Resistance Technique for Resistivity Measurements on Silicon, "J. Electrochem. Soc., Vol. 113, p. 255. 1966.
2. Mazur R. G. and G. A. Gruber, "Spreading Resistance Profiling," Section 3.1. in Materials and Process Characterization of Ion Implantation, edited by M. I. Current and C. B. Yarling. Ion Beam Press, 1997.
3. ASTM F-723-88. "Standard Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped and Phosphorus-Doped Silicon." American Society for Testing and Materials, 1997.
4. Hartford E. J., Ramey S. M., Ye C. W., and Hartford C. L., "Comparison of contact radius models for ultrashallow spreading resistance profiles," J. Vac. Sci. Technol. B, vol. 18, no. 1, Jan/Feb 2000. pp. 401-404.
5. Karpov I., Hartford C., Moran G., Krishnakumar S., Choma R., and Linn J., "Investigation of the Dopant Distribution in Thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry," Mat. Res. Soc. Symp. Proc. Vol.500, 1998. pp. 75-80.
6. Clapper R. A., Schimmel D. G., J. Tsai C. C., Jabara F. S., Stevie R. A., and Kahora P. M., "Comparison of Boron Profiles by the Spreading Resistance Profile and the Secondary Ion Mass Spectrometry Techniques," J. Electrochem. Soc. Vol. 137, No. 6, June 1990. pp. 1877-1883.
7. SSM 2000 Operators Manual.