Investigation of the dopant distribution in thin epitaxial silicon layers by means of spreading resistance probe and secondary ion mass spectrometry

Materials Research Society Symposium - Proceedings

Volumn 500, Issue , 1998, Pages 75-80

  Karpov, Ilya ^a   Hartford, Catherine ^a   Moran, Greg ^a   Krishnakumar, Subramania ^a   Choma, Ron ^a   Linn, Jack ^a  

^a Mitsubishi Silicon America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; PROBES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THIN FILMS;

DOPANT DISTRIBUTION; SPREADING RESISTANCE PROBE;

SEMICONDUCTING SILICON;

EID: 0032297961     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)