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Volumn 18, Issue 1, 2000, Pages 401-404

Comparison of contact radius models for ultrashallow spreading resistance profiles

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; MATHEMATICAL MODELS; MULTILAYERS; SEMICONDUCTING FILMS; SEMICONDUCTOR JUNCTIONS;

EID: 0033683707     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591203     Document Type: Article
Times cited : (4)

References (9)
  • 7
    • 0342567509 scopus 로고    scopus 로고
    • Standard practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
    • 10.05
    • ASTM F723-88, "Standard Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped and Phosphorus-Doped Silicon," ASTM Annu. Standards, 10.05 (1996).
    • (1996) Astm Annu. Standards


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.