Time-resolved core level photoemission: Surface photovoltage dynamics of the SiO2/Si(1 0 0) interface

Surface Science

Volumn 543, Issue 1-3, 2003, Pages 87-94

  Widdra, W ^a,b,d   Brocker D ^a   Giessel T ^a   Hertel, I V ^a,c   Kruger W ^a   Liero, A ^a   Noack, F ^a   Petrov, V ^a   Pop, D ^a   Schmidt, P M ^a   Weber, R ^a   Will, I ^a   Winter, B ^a  

^a MAX BORN INSTITUT   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c FREIE UNIVERSITÄT BERLIN   (Germany)

^d MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

Silicon; Silicon oxides; Surface electronic phenomena (work function, surface potential, surface states, etc.); Synchrotron radiation photoelectron spectroscopy

Indexed keywords

INTERFACES (MATERIALS); LASER PULSES; PHOTOEMISSION; RELAXATION PROCESSES; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE PHOTOVOLTAGE (SPV);

SURFACE PHENOMENA;

EID: 0042830702     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.07.005     Document Type: Article

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